Device-Circuit Co-Optimization for Negative Capacitance FinFETs based on SPICE Model

被引：0

作者：

Huo, Jiali ^{[1
]}

Huang, Weixing ^{[1
]}

Zhang, Fan ^{[1
]}

Huo, Qiang ^{[1
]}

Gan, Weizhuo ^{[1
]}

Xu, Haoqing ^{[1
]}

Zhu, Huilong ^{[1
]}

Yin, Huaxiang ^{[1
]}

Wu, Zhenhua ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc R&D Ctr IMECAS, Beijing, Peoples R China

来源：

IWAPS 2020: PROCEEDINGS OF 2020 4TH INTERNATIONAL WORKSHOP ON ADVANCED PATTERNING SOLUTIONS (IWAPS) | 2020年

基金：

中国国家自然科学基金;

关键词：

NC-FinFETs; BSIM-CMG; LK Equation; SPICE Model; Inverter; Ring Oscillator; TRANSISTORS; MFMIS; MFIS;

D O I：

10.1109/iwaps51164.2020.9286809

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article presents a device-circuit co-optimization on Negative Capacitance FinFETs (NC-FinFETs). A physics-based SPICE model that combines industry-standard BSIM-CMG model and Landau Khalatnikov (LK) equation is developed for the NC-FinFETs. Different ferroelectric areas (A(FE)) are selected to analyze the characteristics of the NC-FinFETs. The influences of work function (WF) and capacitance matching on NC-FinFETs are investigated to further optimize the DC performance of inverters. Based on the NC-FinFETs SPICE model, we simulate the transient characteristics of the ring oscillator (RO) and analyze the delay-energy characteristics of the RO in detail. At low supply voltage (V-DD), the delay of NC-FinFETs-based RO is much smaller than that of conventional FinFETs-based RO. Under the same delay, the energy consumption of NC-FinFETs-based RO is 50.4% lower than that of FinFETs-based RO. This result shows that NC-FinFETs have great advantages in low-power applications.

引用

页码：67 / 70

页数：4

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