Electronic excitation spectra of organic semiconductor/ionic liquid interface by electrochemical attenuated total reflectance spectroscopy

被引:5
|
作者
Tanabe, Ichiro [1 ]
Imoto, Iroha [1 ]
Okaue, Daijiro [1 ]
Imai, Masaya [1 ]
Kumagai, Shohei [2 ]
Makita, Tatsuyuki [2 ]
Mitani, Masato [2 ]
Okamoto, Toshihiro [2 ]
Takeya, Jun [2 ]
Fukui, Ken-ichi [1 ,3 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Osaka, Japan
[2] Univ Tokyo, Grad Sch Frontier Sci, Chiba, Japan
[3] Inst Mol Sci, Dept Photomol Sci, Okazaki, Aichi, Japan
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; TEMPERATURE-DEPENDENCE; IONIC LIQUIDS; CHARGE; MOBILITY; POLYMER; DYNAMICS;
D O I
10.1038/s42004-021-00525-y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Interfaces are a key functional element in organic devices, but accessing buried interfaces has been challenging, Here the authors present a novel spectroscopic setup to investigate the spectral properties of ionic liquid/organic films interfaces under an electric field. The interface of organic semiconductor films is of particular importance with respect to various electrochemical devices such as transistors and solar cells. In this study, we developed a new spectroscopic system, namely electrochemical attenuated total reflectance ultraviolet (EC-ATR-UV) spectroscopy, which can access the interfacial area. Ionic liquid-gated organic field-effect transistors (IL-gated OFETs) were successfully fabricated on the ATR prism. Spectral changes of the organic semiconductor were then investigated in relation to the gate voltage application and IL species, and the magnitude of spectral changes was found to correlate positively with the drain current. Additionally, the Stark shifts of not only the organic semiconductor, but also of the IL on the organic semiconductor films were detected. This new method can be applied to other electrochemical devices such as organic thin film solar cells, in which the interfacial region is crucial to their functioning.
引用
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页数:8
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