High-precision CD measurement using energy-filtering SEM techniques

被引：2

作者：

Bizen, Daisuke ^{[1
]}

Sakakibara, Makoto ^{[1
]}

Suzuki, Makoto ^{[2
]}

Momonoi, Yoshinori ^{[2
]}

Kawano, Hajime ^{[2
]}

机构：

[1] Hitachi Ltd, Kokubunji, Tokyo, Japan

[2] Hitachi High Technol Corp, Hitachinaka, Ibaraki, Japan

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2017年 / 16卷 / 02期

关键词：

CD-SEM; voltage contrast; energy filter; high-aspect-ratio structure; SCANNING-ELECTRON-MICROSCOPE; ANALYZER; METROLOGY; BEAM;

D O I：

10.1117/1.JMM.16.2.024004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Voltage contrast (VC) images obtained using an energy filter (EF) were used to measure the bottom surface of high-aspect-ratio structures. The VC images obtained using the conventional EF were sensitive to variations in wafer potential. Since CD-SEM metrology requires precise EF voltage control when using VC images, we developed an EF voltage correction method to be used at each measurement point. Consequently, bottom-edge measurement, independent of the wafer potential fluctuations, was achieved using the newly developed EF. Our developed technique is effective for CD-SEM metrology using VC images. (C) 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：5

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