Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy

被引：85
|
作者：
Lu, H [1 ]
Schaff, WJ
Eastman, LF
Wu, J
Walukiewicz, W
Cimalla, V
Ambacher, O
机构：
[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 06期
关键词：
D O I：
10.1063/1.1599634
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report heteroepitaxial growth of InN on r-plane sapphire substrates with an AlN nucleation layer and GaN buffer using plasma-assisted molecular-beam epitaxy. The InN film was identified to be nonpolar (11 (2) over bar0) a-plane which follows the a-plane GaN buffer. Optical absorption and photoluminescence measurements of this material show that InN has a fundamental band gap of about 0.7 eV, which is also seen for growth on c-plane sapphire. The room-temperature Hall mobility of undoped a-plane InN is around 250 cm(2)/V s with a carrier concentration around 6x10(18) cm(-3). We also studied the electrical properties of the a-plane InN as a function of film thickness. In contrast to c-plane InN grown on c-plane sapphire, we did not observe apparent improvement of electrical properties of a-plane InN by growing thicker films. (C) 2003 American Institute of Physics.
引用
收藏
页码：1136 / 1138
页数：3
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