The Effects of Gamma Irradiation on GaAs HBT

被引：0
|
作者：
Yang Shi [1 ]
Lu Hong-Liang [1 ]
Zhang Yu-Ming [1 ]
Zhang Yi-Men [1 ]
Zhang Jin-Can [1 ]
Zhang Hai-Peng [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
来源：
2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年
关键词：
gamma irradiation; radiation effects; GaAs HBT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of gamma irradiation on Gallium-Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) is reported. DC and Radio Frequency (RF) performance are investigated for gamma doses up to 7 Mrad(Si). After 7Mrad(Si) gamma irradiation, an increase of base current (I-b) is observed, the change is thought to be mainly due to the reduction of the effective minority carrier lifetime (tau) in the n-type emitter. Besides, the cutoff frequency (fT) decreases, which is caused by the decrease of the electron mobility (mu(n)) in the base and the collector-base space charge region.
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页数：2
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