H2 selective gas sensor based on SnO2

被引：0
|
作者：
Katsuki, A [1 ]
Fukui, K [1 ]
机构：
[1] New Cosmos Elect Co Ltd, Yodogawa Ku, Osaka 5320036, Japan
来源：
TECHNICAL DIGEST OF THE SEVENTH INTERNATIONAL MEETING ON CHEMICAL SENSORS | 1998年
关键词：
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
A highly selective H-2 gas sensor was obtained by formation of a dense layer functioning as a "molecular sieve" near the surface of a sintered tin oxide layer. The dense layer (the depth of ca. 0.1 mm) was formed by chemical vapor deposition of hexamethyldisiloxane (HMDS). While, a serious reduction of the hydrogen sensitivity was always caused by a deactivation of tin oxide with hydrogen. Such a serious problem was removed by an addition of cerium oxide (2.0 at%), thereby the oxidation activity of tin oxide was controlled. The H-2 selective gas sensor thus obtained had an extremely minor humidity dependence and a prominent long term stability.
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页码：371 / 373
页数：3
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