A 433/915-MHz Class AB Discrete Power Amplifier Based on Multiresonant Circuits

被引：0
|
作者：
Silva, Fabricio G. S. [1 ]
de Lima, Robson N. [1 ,2 ]
Freire, Raimundo C. S. [3 ]
机构：
[1] Fed Inst Bahia IFBA, Dept Elect Elect Technol, Salvador, BA, Brazil
[2] Fed Univ Bahia UFBA, Dept Elect Engn, Salvador, BA, Brazil
[3] Univ Fed Campina Grande, Dept Elect Engn, Salvador, BA, Brazil
来源：
2013 26TH SYMPOSIUM ON INTEGRATED CIRCUITS AND SYSTEMS DESIGN (SBCCI 2013) | 2013年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, the concept of block reuse is applied to design a dual-band power amplifier. The amplification cell is shared for each frequency band and the impedance matching networks are designed making use of switchless multiresonant circuits. The target frequencies are those of the ISM band, 433 and 915 MHz. In order to obtain a good compromise between linearity and efficiency, a class AB operation is adopted. The performance of amplifier was evaluated using post layout simulation. The results have shown 44.4 % and 44.8 % PAE peak efficiency at 29.0 dBm and 29.8 dBm output power, respectively, in the target frequencies.
引用
收藏
页数：6
相关论文
共 50 条
  • [41] A 55 nm CMOS RF Transmitter Front-End with an Active Mixer and a Class-E Power Amplifier for 433 MHz ISM Band Applications
    Yuan, Huazhong
    Zhou, Ranran
    Wang, Peng
    Xu, Hui
    Wang, Yong
    ELECTRONICS, 2023, 12 (22)
  • [42] Class-F Power Amplifier with High Power Added Efficiency for 900MHz
    Al-Ajmi, M.
    Al-Blushi, A.
    Al-Mamari, R.
    Nadir, Z.
    Bait-Suwailam, M.
    2014 2ND INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN (ICED), 2014, : 137 - 142
  • [43] A 433-MHz Compact Inverse Class-F Rectifier for Biomedical Wireless Power Transmission
    Nguyen, Dang-An
    Bui, Gia Thang
    Nam, Hyungseok
    Kim, Yanghyun
    Seo, Chulhun
    IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (06): : 759 - 762
  • [44] WiMAX Class AB and Class E Power Amplifier Design Using Equivalent Capacitance Concept
    Medina, M. A. Yarleque
    Schreurs, D.
    Nauwelaers, B.
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2008, 18 (06) : 543 - 551
  • [45] A 10-to-650MHz 1.35W Class-AB Power Amplifier with Instantaneous Supply-Switching Efficiency Enhancement
    Lee, Jeffrey
    Pamarti, Sudhakar
    Gomez, Ramon A.
    2017 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2017,
  • [46] A voltage-mode class-S power amplifier for the 450 MHz band
    Wentzel, Andreas
    Meliani, Chafik
    Heinrich, Wolfgang
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2011, 3 (03) : 311 - 318
  • [47] Electrical and temperature stress effects on class-AB power amplifier performances
    Yu, Chuanzhao
    Yuan, J. S.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (06) : 1346 - 1350
  • [48] A broadband high efficiency class-AB LDMOS balanced power amplifier
    Wu, L.
    Basaran, U.
    Dettmann, I.
    Berroth, M.
    Bitzer, T.
    Pascht, A.
    35th European Microwave Conference, Vols 1-3, Conference Proceedings, 2005, : 1079 - 1082
  • [49] Design of Class-AB Power Amplifier using GaN HEMT Technology
    Ramya, K.
    Shanthi, P.
    2018 4TH INTERNATIONAL CONFERENCE FOR CONVERGENCE IN TECHNOLOGY (I2CT), 2018,
  • [50] CLASS-AB HIGH-SWING CMOS POWER-AMPLIFIER
    MISTLBERGER, F
    KOCH, R
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (07) : 1089 - 1092
12345