Chemical Mechanical Planarization of Copper Using Ethylenediamine and Hydrogen Peroxide Based Slurry

被引：2

作者：

Liu, Ping ^{[1
]}

Lu, Xinchun ^{[1
]}

Liu, Yuhong ^{[1
]}

Luo, Jianbin ^{[1
]}

Pan, Guoshun ^{[1
]}

机构：

[1] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China

来源：

ADVANCED TRIBOLOGY | 2009年

关键词：

Chemical mechanical polishing; Copper; Ethylenediamine; Hydrogen peroxide;

D O I：

10.1007/978-3-642-03653-8_311

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

Chemical mechanical planarization (CMP) of copper is a committed step in the IC manufacturing. In this work, the slurry including ethylenediamine and hydrogen peroxide was studied. Result showed that the material removal rate of copper increased with the concentration of ethylenediamine, and the effect of the concentration of hydrogen peroxide was also studied. When the concentration of ethylenediamine was 100mM/L, with the concentration of 0.6% hydrogen peroxide, we got a high material removal rate, that is 1899nm/min. Some corrosion inhibitors like benzotriazole and potassium sorbate were added to the slurry to improve the surface after CMP.

引用

页码：908 / 911

页数：4

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