A comparative study on diode-pumped continuous wave Tm:Ho:YVO4 and Tm:Ho:GdVO4 lasers

被引：12
|
作者：
Yao, B. Q. [1 ]
Chen, F. [1 ]
Wu, C. T. [1 ]
Wang, Q. [1 ]
Li, G. [1 ]
Zhang, C. H. [1 ]
Wang, Y. Z. [1 ]
Ju, Y. L. [1 ]
机构：
[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Peoples R China
来源：
LASER PHYSICS | 2011年 / 21卷 / 03期
关键词：
HIGH-POWER; TM;
D O I：
10.1134/S1054660X11050306
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 mu m range, Tm:Ho:YVO4 microchip laser and Tm:Ho:GdVO4 microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO4 laser and Tm:Ho:GdVO4 laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO4 laser, Tm:Ho:YVO4 laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO4 laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO4 laser.
引用
收藏
页码：468 / 471
页数：4
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