Effect of Ga on optical properties of novel Te-based far infrared transmitting chalcogenide glasses

被引:10
|
作者
Nie Qiu-Hua [1 ]
Wang Guo-Xiang [1 ]
Wang Xun-Si [1 ]
Xu Tie-Feng [1 ]
Dai Shi-Xun [1 ]
Shen Xiang [1 ]
机构
[1] Ningbo Univ, Coll Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
optical materials; chalcogenide glasses; optical band gap; infrared spectroscopy; CRYSTALLIZATION KINETICS;
D O I
10.7498/aps.59.7949
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A series of (100 - x) (GeTe4) -xGa (x = 0, 5, 10 mol%) far infrared transmitting chalcogenide glasses is prepared by the traditional melt-quenching method. In this paper, the differential thermal analysis (DTA), visible/near-infrared absorption spectroscopy, infrared transmission spectra are adopted to analyze composition, structure and performance of the GeTe4 glass system with the addition of Ga. The results show that the Te-Ga bond is formed, which can reduce Te metallic character. When the content of Ga is 10 mol%, the glass is of the best thermal stability. With the addition of Ga, the transmission percentage is improved and infrared cut-off wavelength of the glasses extends beyond 20 mu m. Based on the metallization criterion and average bond energy, the relationship between optical band gap and composition is investigated.
引用
收藏
页码:7949 / 7955
页数:7
相关论文
共 14 条
  • [1] Vacuum ultraviolet absorption spectrum of photorefractive Sn-doped silica fiber preforms
    Anedda, A
    Carbonaro, CM
    Serpi, A
    Chiodini, N
    Paleari, A
    Scotti, R
    Spinolo, G
    Brambilla, G
    Pruneri, V
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 280 (1-3) : 287 - 291
  • [2] The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As
    Chung, Sunjae
    Kim, H. C.
    Lee, Sanghoon
    Liu, X.
    Furdyna, J. K.
    [J]. SOLID STATE COMMUNICATIONS, 2009, 149 (41-42) : 1739 - 1742
  • [3] Effect of radiation trapping on spectroscopic properties of Er3+-doped oxide glasses
    Dai, SX
    Xu, TF
    Nie, QH
    Xiang, S
    Zhang, JJ
    Hu, LL
    [J]. ACTA PHYSICA SINICA, 2006, 55 (03) : 1479 - 1485
  • [4] A family of far-infrared-transmitting glasses in the Ga-Ge-Te system for space applications
    Danto, Sylvain
    Houizot, Patrick
    Boussard-Pledel, Catherine
    Zhang, Xiang-Hua
    Smektala, Frederic
    Lucas, Jacques
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2006, 16 (14) : 1847 - 1852
  • [5] Effect of interionic interaction on the electronic polarizability, optical basicity and binding energy of simple oxides
    Dimitrov, V
    Komatsu, T
    [J]. JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1999, 107 (11) : 1012 - 1018
  • [6] CHEMICAL BONDING IN THE OXIDES OF THE ELEMENTS - A NEW APPRAISAL
    DUFFY, JA
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1986, 62 (02) : 145 - 157
  • [7] Huang SP, 2005, CHINESE PHYS, V14, P1631, DOI 10.1088/1009-1963/14/8/030
  • [8] Te-rich Ge-Te-Se glass for the CO2 infrared detection at 15 μm
    Maurugeon, S.
    Bureau, B.
    Boussard-Pledel, C.
    Faber, A. J.
    Zhang, X. H.
    Geliesen, W.
    Lucas, J.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2009, 355 (37-42) : 2074 - 2078
  • [9] Tauc J., 1974, Amorphous and Liquid Semiconductors, P171, DOI DOI 10.1007/978-1-4615-8705-7
  • [10] THE LONG-WAVELENGTH EDGE OF PHOTOGRAPHIC SENSITIVITY AND OF THE ELECTRONIC ABSORPTION OF SOLIDS
    URBACH, F
    [J]. PHYSICAL REVIEW, 1953, 92 (05): : 1324 - 1324