Passivation of semi-insulating polycrystalline CdZnTe films

被引：10
|
作者：
Kim, Ki Hyun [1 ]
Won, Jae Ho [1 ]
Cho, Shin Hang [1 ]
Suh, Jong Hee [1 ]
Cho, Pyong Kon [1 ]
Hong, Jinki [1 ]
Kim, Sun Ung [1 ]
Han, You Ree [2 ]
机构：
[1] Korea Univ, Dept Display & Semicond Phys, Chungnam 339800, South Korea
[2] Korea Univ, Grad Sch Educ, Seoul 136701, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 01期
关键词：
sulfur passivation; leakage current; CdTeS; heterojunction; semi-insulating CdZnTe; inter-pixel resistance; 1/f noise;
D O I：
10.3938/jkps.53.317
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Surface effects play an important role in the overall performance of X-ray detector. The effects of passivation with (NH4)(2)S on semi-insulating polycrystalline CdZnTe thick films were analyzed with X-ray photoelectron spectroscopy (XPS), photoconductive decay (PCD), noise power spectrum and pulse height spectra measurements. Sulfur passivation with (HN4)(2)S effectively removes the Te-oxide layers on the CdZnTe surface, reduces the surface leakage current and gives higher energy resolution by suppressing 1/f noise.
引用
收藏
页码：317 / 321
页数：5
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