Probability of atomic or molecular oxygen species in silicon and silicon dioxide

被引:4
|
作者
Hoshino, T [1 ]
Hata, M
Neya, S
Nishioka, Y
Watanabe, T
Tatsumura, K
Ohdomari, I
机构
[1] Chiba Univ, Grad Sch Pharmaceut Sci, Chiba 2638522, Japan
[2] Texas Instruments Japan Ltd, Tsukuba Res & Dev Ctr, Tsukuba, Ibaraki 3050841, Japan
[3] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
关键词
silicon oxidation; atomic oxygen; molecular oxygen; spin electronic state; theoretical calculation;
D O I
10.1143/JJAP.42.6535
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantum chemical calculations were performed to investigate the probabilities of the existence of molecular and atomic oxygen inside Si and SiO2. Optimized configurations were obtained for both Si and SiO2 clusters including an O-2 molecule or an O atom in the spin singlet or triplet state. The spin triplet O-2 molecule is the most favorable in SiO2, while the spin singlet 0 atom is dominant in Si. The diffusion of an O-2 molecule from the outside to the inside Of SiO2 Was computed with its potential energy change. The dissociation reaction of an O-2 molecule at the SiO2/Si interface and the transfer reaction of an O atom across the SiO2/Si interface were also examined by estimating for their energy barriers.
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页码:6535 / 6542
页数:8
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