Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates

被引：19
|
作者：
Wang, Shen-Jie
Li, Nola
Park, Eun-Hyun
Lien, Siou-Cheng
Feng, Zhe Chuan [1 ]
Valencia, Adriana
Nause, Jeff
Ferguson, Ian
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] CERMET Inc, Atlanta, GA 30318 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 10期
关键词：
D O I：
10.1063/1.2817482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaN layers have been grown on (0001) ZnO substrates by metalorganic chemical vapor deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with a wide range of In composition were confirmed by high-resolution x-ray diffraction. Even at high indium concentrations no In droplets and phase separation appeared, possibly due to coherent growth of InGaN on ZnO. Photoluminescence showed broad InGaN-related emissions with peak energy lower than the calculated InGaN band gap, possibly due to Zn/O impurities diffused into InGaN from the ZnO substrate. An activation energy of 59 meV for the InGaN epilayer is determined. (C) 2007 American Institute of Physics.
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页数：3
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