Microstructure modified HfO2 using Zr addition with TaxCy gate for improved device performance and reliability

被引：0

作者：

Hegde, RI ^{[1
]}

Triyoso, DH ^{[1
]}

Tobin, PJ ^{[1
]}

Kalpat, S ^{[1
]}

Ramon, ME ^{[1
]}

Tseng, HH ^{[1
]}

Schaeffer, JK ^{[1
]}

Luckowski, E ^{[1
]}

Taylor, WJ ^{[1
]}

Capasso, CC ^{[1
]}

Gilmer, DC ^{[1
]}

Moosa, M ^{[1
]}

Haggag, A ^{[1
]}

Raymond, M ^{[1
]}

Roan, D ^{[1
]}

Nguyen, J ^{[1
]}

La, LB ^{[1
]}

Hebert, E ^{[1
]}

Cotton, R ^{[1
]}

Wang, XD ^{[1
]}

Zollner, S ^{[1
]}

Gregory, R ^{[1
]}

Werho, D ^{[1
]}

Rai, RS ^{[1
]}

Fonseca, L ^{[1
]}

Stoker, M ^{[1
]}

Tracy, C ^{[1
]}

Chan, BW ^{[1
]}

Chiu, YH ^{[1
]}

White, BE ^{[1
]}

机构：

[1] Freescale Semicond Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

For the first time we report on the development of a novel hafnium zirconate (HfZrO(x)) gate dielectric with a Ta(x)C(y) metal gate. Compared to HfO(2), the new HfZrO(x) gate dielectric showed: (1) higher transconductance, (2) less charge trapping, (3) higher drive current, (4) lower NMOS V, (5) reduced C-V hysteresis, (6) lower interface state density, (7) superior wafer-level thickness uniformity, and (8) longer PBTI lifetime. We attribute these improvements to a microstructure that is modified by addition of Zr to HfO(2).

引用

页码：39 / 42

页数：4

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