Effect of electrode and interface oxide on the property of ReRAM composed of Pr0.7Ca0.3MnO3

The current-voltage (I-V) characteristics of resistance random access memories (ReRAM) composed of the [top electrode]/Pr0.7Ca0.3MnO3(PCMO)/Pt structure were investigated by using Au, Pt, Ag, Cr, Mo and W needles as top electrodes against the PCMO layer. Reproducible resistance switching can be recognized in devices using Cr, Mo and W. Devices using Mo and W electrode showed two type of characteristics: (A) resistance change from low resistance state to high resistance state by positive bias voltage and (B) vice versa. Since the surfaces of these needles may be oxidized, we took account of the effect by the surface oxide. To check this assumption, we annealed the W needles and Mo needles in air and investigated I-V characteristics without the PCMO layer. As a result, the characteristic-(B) was classified to be induced by a surface oxide. Meanwhile, the characteristic-(A) is from PCMO. The existence of the interface oxide between top electrode and PCMO seems to decide the type of characteristics and to influence the reproducibility of the ReRAM property.