Large optical nonlinearity and fast response time in low-temperature grown GaAs/AlAs multiple quantum wells

被引：13

作者：

Okuno, T ^{[1
]}

Masumoto, Y

Ito, M

Okamoto, H

机构：

[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

[2] Chiba Univ, Fac Engn, Dept Mat Technol, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 01期

关键词：

D O I：

10.1063/1.126876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated optical nonlinearity in low-temperature (LT) molecular-beam-epitaxy-grown GaAs/AlAs multiple quantum wells (MQWs). Minimum saturation intensity, that is, maximum optical nonlinearity, is observed at around the excitonic absorption peak. The saturation intensity of the LT MQW is smaller by an order of magnitude than that of LT bulk GaAs. The response time of the LT MQW is 1/4-1/2 of the LT GaAs, and becomes less than 1 ps, corresponding to similar to 1/400 of the standard-temperature-grown MQW. These results demonstrate a clear advantage of the room-temperature excitons in the LT MQW having large optical nonlinearity as well as fast response time. (C) 2000 American Institute of Physics. [S0003-6951(00)03627-5].

引用

页码：58 / 60

页数：3

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