GaN-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer

被引：9

作者：

Chen, Chin-Hsiang ^{[1
]}

Tsai, Chia-Ming ^{[1
]}

Cheng, Chung-Fu ^{[1
]}

Yen, Shuo-Fu ^{[1
]}

Su, Peng-Yin ^{[1
]}

Tsai, Yu-Hsuan ^{[1
]}

Tsai, Cheng-Nan ^{[1
]}

机构：

[1] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期

关键词：

MSM-PHOTODETECTORS; ELECTRON INJECTION; PHOTODIODES; TEMPERATURE; FLUORIDE;

D O I：

10.1143/JJAP.51.04DG15

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with the CsF current-suppressing layer were, for the first time, fabricated and characterized successfully. It was found that we can achieve a low dark current and large photocurrent-to-dark-current contrast ratio from the proposed devices with the use of the CsF current-suppressing layer. With a 5 V applied bias, it was found that the leakage current of the fabricated MIS PDs with the CsF current-suppressing layer was 7.1 x 10(-10) A. This small leakage current should be attributed to the large barrier height caused by the insertion of the CsF current-suppressing layer. With a 5 V applied bias, the barrier height of Phi(B) = 0.942 can be calculated from the dark current-voltage (I-V) characteristics. We can also achieve a large UV-to-visible rejection ratio from the PDs with the CsF current-suppressing layer. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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