Fabrication and multi-band photoluminescence of vertically aligned ZnO/ZnSe core/shell nanorod arrays

被引:4
|
作者
Yang, Qin [1 ,3 ]
Cai, Hua [1 ]
Hu, Zhigao [2 ]
Duan, Zhihua [2 ]
Li, Yanli [1 ]
Sun, Jian [1 ]
Xu, Ning [1 ]
Wu, Jiada [1 ]
机构
[1] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[2] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
[3] Guizhou Minzu Univ, Coll Sci, Guiyang 550025, Peoples R China
来源
MATERIALS RESEARCH EXPRESS | 2014年 / 1卷 / 01期
基金
国家教育部博士点专项基金资助; 中国国家自然科学基金;
关键词
ZnO/ZnSe core/shell nanorod; photoluminescence; nanostructured material; compound semiconductor; semiconductor heterostructure; RAMAN-SCATTERING; NANOWIRE ARRAYS; ZNO; ZNSE; GROWTH; GA;
D O I
10.1088/2053-1591/1/1/015010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vertically aligned ZnO/ZnSe core/shell nanorod (NR) arrays were fabricated on Si (100) using combined approach of hydrothermal growth of ZnO followed by pulsed laser deposition of ZnSe. The obtained ZnO/ZnSe core/shell NRs are composed of wurtzite ZnO cores and zinc blende ZnSe shells with the hydrothermally grown ZnO core nanorods preferentially c-axis oriented. Upon excitation by 325 nm light at room temperature, the ZnO/ZnSe core/shell NR arrays emit multi-band photoluminescence (PL) including the near-band-edge (NBE) emissions of ZnO and ZnSe as well as the defect-related emission and the emission associated with the effective band gap formed due to the staggered band alignment of the heterojunction constructed from ZnO and ZnSe, while the NBE emission of the ZnO cores is greatly suppressed by the ZnSe shells. The PL shows a strong dependence on temperature. Post-fabrication annealing of the samples in N-2 results in an improvement in crystal structure and an enhancement of PL intensity.
引用
收藏
页数:12
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