Electronic transport of bilayer graphene with asymmetry line defects

被引：4

作者：

Zhao, Xiao-Ming ^{[1
]}

Wu, Ya-Jie ^{[2
]}

Chen, Chan ^{[1
]}

Liang, Ying ^{[1
]}

Kou, Su-Peng ^{[1
]}

机构：

[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China

[2] Xian Technol Univ, Sch Sci, Xian 710021, Peoples R China

来源：

CHINESE PHYSICS B | 2016年 / 25卷 / 11期

基金：

中国国家自然科学基金;

关键词：

bilayer graphene; defects; transportation;

D O I：

10.1088/1674-1056/25/11/117303

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Buttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering.

引用

页数：5

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