Investigation of InxGa1-xN islands with electron microscopy

被引：0
|
作者：
Pretorius, A. [1 ]
Yamaguchi, T. [1 ]
Schowalter, M. [1 ]
Kroeger, R. [1 ]
Kuebel, C. [1 ]
Hommel, D. [1 ]
Rosenauer, A. [1 ]
机构：
[1] Univ Bremen, Inst Solid State Phys, D-2800 Bremen 33, Germany
来源：
Microscopy of Semiconducting Materials | 2005年 / 107卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InxGa1-xN islands grown by molecular beam epitaxy are analysed by transmission electron microscopy. Samples are compared which were of different nominal In concentrations and with or without GaN capping. The optimum imaging conditions for evaluation are described with special focus on polarity determination during analysis.
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页码：17 / 20
页数：4
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