Femtosecond Laser Irradiation to ZnS Phosphor for Inorganic Electroluminescent Displays

被引：0
|
作者：
Nabesaka, Kyohei [1 ]
Ishikawa, Yasuaki [1 ,3 ]
Doe, Takahiro [1 ]
Taguchi, Nobuyoshi [2 ]
Hosokawa, Yoichiroh [1 ]
Uraoka, Yukiharu [1 ,3 ]
机构：
[1] Nara Inst Sci & Technol, 8916-5 Takayama Cho, Nara 6300192, Japan
[2] Image Tech Inc, Nara 630, Japan
[3] CREST, Kawaguchi, Saitama 3320012, Japan
来源：
2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013) | 2013年
关键词：
inorganic electroluminescence; zinc sulfide (ZnS); Femto-second laser;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the impact of atomization treatment by Femto-second laser to improve the luminance properties of distributed-type ZnS inorganic EL devices. The luminance intensity of EL devices with the phosphor irradiated for the some conditions has become five times higher than that with the original phosphor.
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页数：2
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