Characterization of CMOS On-Chip Inductors in Millimeter-Wave Regime

Due to the compact layout of millimeter-wave integrated-circuit, the effects caused by coupling among neighboring inductors may seriously degrade circuit performance. This paper presents two kinds of spiral inductor including a stand-alone inductor and an adjacent-inductor pair which are both fabricated with the 0.13-mu m CMOS process. Improved equivalent circuit models of the two kinds of inductors are analyzed, as well as the parameter extraction method. Compared with the measurement, the inductances, quality factors, and S-parameters of the model have good agreement up to millimeter-wave frequency band(110GHz), as well as EM simulation results. The agreements verify the accuracy and validation of proposed model.