Electron-hole Coulomb interaction in InGaN quantum dots

被引:3
|
作者
Bugrov, VE [1 ]
Konstantinov, OV [1 ]
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1134/1.1187576
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In contrast to group-III arsenide-based quantum dots, group-III nitride-based quantum dots are much smaller in size and have less conduction band offset. For this reason, it is important to take into account the electron-hole Coulomb interaction in which the spherical quantum dot is substituted for the cube-shaped quantrum dot, which in this paper is treated within the Hartree approximation. In addition to making the electron binding energy several times larger, this strong Coulomb interaction between carriers in quantum dots makes conventional distribution functions invalid, requiring their recalculation. Such calculations reveal that while the one-particle distribution functions are donor-like, the electron-hole function is quite different from its predecessors. (C) 1998 American Institute of Physics. [S1063-7826(98)01910-3].
引用
收藏
页码:1101 / 1105
页数:5
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