Dual-band sub-1 VCMOS LNA for 802.11A/B WLAN applications

被引：0
|
作者：
Tsang, TKK [1 ]
Ei-Gamal, MN [1 ]
机构：
[1] McGill Univ, Microelect & Comp Syst, Montreal, PQ H3A 2A7, Canada
来源：
PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I: ANALOG CIRCUITS AND SIGNAL PROCESSING | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design and experimental results of a dual-band CMOS low noise amplifier (LNA), which can operate from a supply voltage as low as 0.7 V. A switched inductor technique is used. The LNA was fabricated in a standard 0.18 mum CMOS process, and is designed to be used in a dual-band 2.4- and 5-GHz WLAN receiver. With a 1 V supply, the LNA exhibits a measured power gain and noise figure of S-21=11.6 dB and NF=2.3 dB for the 2.4 GHz band, and S-21=10.8 dB and NF=2.9 dB for the 5 GHz band.
引用
收藏
页码：217 / 220
页数：4
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