Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films

被引：10

作者：

Kumar, S. R. Sarath ^{[1
]}

Kasiviswanathan, S. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 02期

关键词：

ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; SEMICONDUCTORS; TRANSPORT; BEAM;

D O I：

10.1088/0268-1242/24/2/025028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermopower measurements in a range of 300-650 K along with room temperature optical absorption and electrical resistivity studies were performed on indium oxide (IO) and indium tin oxide (ITO) thin films grown by reactive dc sputtering. The thermopower of as-grown and oxygen-annealed IO and ITO films measured in Ar ambient displayed characteristics attributable to oxygen loss. The observations were substantiated with optical absorption and electrical resistivity results.

引用

页数：7

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