Device Concepts for Graphene-Based Terahertz Photonics

被引:114
|
作者
Tredicucci, Alessandro [1 ,2 ]
Vitiello, Miriam Serena [1 ,2 ]
机构
[1] CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy
[2] Scuola Normale Super Pisa, I-56127 Pisa, Italy
关键词
Terahertz (THz); detectors; modulators; field effect transistors; far-infrared; lasers; plasma waves; plasmonics; ELECTRON-MOBILITY TRANSISTORS; FIELD-EFFECT TRANSISTORS; QUANTUM CASCADE LASERS; MODULATOR; METAMATERIALS; RADIATION; PHOTORESPONSE; SPECTROSCOPY; TECHNOLOGY; GENERATION;
D O I
10.1109/JSTQE.2013.2271692
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphene is establishing itself as a new photonic material with huge potential in a variety of applications ranging from transparent electrodes in displays and photovoltaic modules to saturable absorber in mode-locked lasers. Its peculiar bandstructure and electron transport characteristics naturally suggest graphene could also form the basis for a new generation of high-performance devices operating in the terahertz (THz) range of the electromagnetic spectrum. The region between 300 GHz and 10 THz is in fact still characterized by a lack of efficient, compact, solid state photonic components capable of operating well at 300 K. Recent works have already shown very promising results in the development of high-speed modulators as well as of bolometer and plasma-wave detectors. Furthermore, several concepts have been proposed aiming at the realization of lasers and oscillators. This paper will review the latest achievements in graphene-based THz photonics and discuss future perspectives of this rapidly developing research field.
引用
收藏
页数:9
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