Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

被引：0
|
作者：
Simanullang, Marolop [1 ]
Wisna, Gde B. M. [2 ]
Cao, Wei [3 ]
Usami, Koichi [1 ]
Banerjee, Kaustav [3 ]
Oda, Shunri [1 ]
机构：
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo, Japan
[2] Bandung Inst Technol, Dept Engn Phys, Bandung, Indonesia
[3] Univ Calif, Dept Elect & Comp Engn, Oakland, CA USA
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Germanium-core/silicon-shell nanowires were grown by an ex-situ method where germanium nanowires were first grown using a vapour-liquid-solid growth mechanism, followed by catalyst removal in an etching solution and deposition of amorphous silicon on the nanowire sidewalls. Back-gated and top-gated field effect transistors based on germanium-core/silicon-shell nanowires exhibited p-type depletion mode characteristics. Field-effect hole mobilities up to 501 cm(2)/V.s were extracted from these nanowires.
引用
收藏
页码：116 / 117
页数：2
相关论文
共 50 条
  • [1] Gate capacitance of back-gated nanowire field-effect transistors
    Wunnicke, Olaf
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [2] Contact resistance in top-gated graphene field-effect transistors
    Huang, Bo-Chao
    Zhang, Ming
    Wang, Yanjie
    Woo, Jason
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (03)
  • [3] Top-gated graphene field-effect transistors on SiC substrates
    Ma Peng
    Jin Zhi
    Guo JianNan
    Pan HongLiang
    Liu XinYu
    Ye TianChun
    Jia YuPing
    Guo LiWei
    Chen XiaoLong
    [J]. CHINESE SCIENCE BULLETIN, 2012, 57 (19): : 2401 - 2403
  • [4] Oxidation of silicon nanowires for top-gated field effect transistors
    Liu, Bangzhi
    Wang, Yanfeng
    Ho, Tsung-ta
    Lew, Kok-Keong
    Eichfeld, Sarah M.
    Redwing, Joan M.
    Mayer, Theresa S.
    Mohney, Suzanne E.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (03): : 370 - 374
  • [5] Top-gated graphene field-effect transistors on SiC substrates
    MA Peng1
    2 Research & Development Center for Functional Crystals
    [J]. Chinese Science Bulletin, 2012, 57 (19) : 2401 - 2403
  • [6] Top-Gated Silicon Nanowire Transistors in a Single Fabrication Step
    Colli, Alan
    Tahraoui, Abbes
    Fasoli, Andrea
    Kivioja, Jani M.
    Milne, William I.
    Ferrari, Andrea C.
    [J]. ACS NANO, 2009, 3 (06) : 1587 - 1593
  • [7] Switching limits of top-gated carbon nanotube field-effect transistors
    Sanchez-Soares, A.
    Gilardi, C.
    Lin, Q.
    Kelly, T.
    Su, S. -K.
    Fagas, G.
    Greer, J. C.
    Pitner, G.
    Chen, E.
    [J]. SOLID-STATE ELECTRONICS, 2023, 202
  • [8] Frequency kesponse of top-gated carbon nanotube field-effect transistors
    Singh, DV
    Jenkins, KA
    Appenzeller, J
    Neumayer, D
    Grill, A
    Wong, HSP
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2004, 3 (03) : 383 - 387
  • [9] Top-gated field-effect transistor and rectifying diode operation of core-shell structured GaP nanowire devices
    Kim, BK
    Kim, JJ
    Lee, JO
    Kong, KJ
    Seo, HJ
    Lee, CJ
    [J]. PHYSICAL REVIEW B, 2005, 71 (15)
  • [10] Electrical Characteristics of the Back-gated Bottom-up Silicon Nanowire Field Effect Transistor
    Kim, DukSoo
    Jung, YoungChai
    Park, MiYoung
    Kim, ByungSung
    Hong, SuHeon
    Choi, MinSu
    Kang, MyungGil
    Yu, YunSeop
    Whang, DongMok
    Hwang, SungWoo
    [J]. 2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, : 145 - +
12345