Synthesis and field-emission properties of oriented GaN nanowires

被引：2
|
作者：
Li, Enling [1 ]
Cheng, Xuhui [1 ]
Zhao, Danna [1 ]
Xu, Rui [1 ]
Xi, Meng [1 ]
Cui, Zhen [1 ]
Zhao, Tao [1 ]
机构：
[1] Xian Univ Technol, Sch Sci, Xian 710048, Peoples R China
来源：
MICRO & NANO LETTERS | 2012年 / 7卷 / 12期
基金：
中国国家自然科学基金;
关键词：
CATALYST; GROWTH; ARRAYS;
D O I：
10.1049/mnl.2012.0829
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Oriented gallium nitride (GaN) nanowires grown on Pt-coated Si (1 1 1) substrates, were synthesised using the chemical vapour deposition method under different Ga sources. The characteristics of the grown GaN nanowires were investigated using scanning electron microscopy and X-ray diffraction, which found that the as-synthesised GaN nanowires of the three samples are of different orientation, and all displayed hexagonal wurtzite structures of GaN crystals. The electron field-emission properties of the three samples of GaN nanowires showed a low turn-on field of 4.5, 5.5 and 6.2 V/mu m, respectively, and field enhancement factors of 1337, 2948 and 2599, respectively.
引用
收藏
页码：1305 / 1307
页数：3
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