Electroresistance and magnetoresistance in La0.9Ba0.1MnO3 thin films

被引：6
|
作者：
Hu, FX
Gao, J
Wang, ZH
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Capital Normal Univ, Dept Phys, Beijing 100037, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 126卷 / 01期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/j.mseb.2005.08.110
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electroresistance and magnetoresistance effects have been investigated in La0.9Ba0.1MnO3 epitaxial thin films. Tensile strain caused by substrate mismatch makes the Curie temperature T-C of the film at similar to 300 K. The influence of an applied dc-current on the resistance in the absence of a magnetic field was studied. Significant change of the peak resistance at different currents was found. The reduction of the peak resistance reaches similar to 27% with an electric current density up to 1.3 x 10(5) A cm(-2). We also studied colossal magnetoresistance (CMR) effect in the films. Applying a magnetic field of 2 T could lead to a magnetoresistance as large as 42%. The reduction of resistance caused by a current density similar to 1.3 x 10(5) A cm(-2) was found to be equivalent to the CMR effect caused by 1.5 T near T-C. The phenomenon that the resistance in CMR manganites could be easily controlled by the electric current should be of high interest for both fundamental research and practical applications. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：102 / 105
页数：4
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