Nanocavity Integrated van der Waals Heterostructure Light-Emitting Tunneling Diode

被引:131
|
作者
Liu, Chang-Hua [1 ]
Clark, Genevieve [2 ]
Fryett, Taylor [3 ]
Wu, Sanfeng [1 ]
Zheng, Jiajiu [3 ]
Hatami, Fariba [4 ]
Xu, Xiaodong [1 ,2 ]
Majumdar, Arka [1 ,3 ]
机构
[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[2] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
[3] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
[4] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
基金
美国国家科学基金会;
关键词
Electroluminescence; van der Waals heterostructure; transition metal dichalcogenides; photonic crystal cavity; optoelectronics; TRANSITION-METAL DICHALCOGENIDES; P-N DIODES; MONOLAYER WSE2; ROOM-TEMPERATURE; LASERS; MOS2; ELECTROLUMINESCENCE; OPTOELECTRONICS; TRANSISTORS; MODULATION;
D O I
10.1021/acs.nanolett.6b03801
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Developing a nanoscale, integrable, and electrically pumped single mode light source is an essential step toward on-chip optical information technologies and sensors. Here, we demonstrate nanocavity enhanced electroluminescence in van der Waals heterostructures (vdWhs) at room temperature. The vertically assembled light-emitting device uses graphene/boron nitride as top and bottom tunneling contacts and monolayer WSe2 as an active light emitter. By integrating a photonic crystal cavity on top of the vdWh, we observe the electroluminescence is locally enhanced (>4 times) by the nanocavity. The emission at the cavity resonance is single mode and highly linearly polarized (84%) along the cavity mode. By applying voltage pulses, we demonstrate direct modulation of this single mode electroluminescence at a speed of similar to 1 MHz, which is faster than most of the planar optoelectronics based on transition metal chalcogenides (TMDCs). Our work shows that cavity integrated vdWhs present a promising nanoscale optoelectronic platform.
引用
收藏
页码:200 / 205
页数:6
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