Characteristics of MgO protective layer with deposition rate in AC-PDPs

被引：0
|
作者：
Hong, Sung Hee [1 ]
Park, E. Y. [1 ]
Son, C. G. [1 ]
Jung, S. J. [1 ]
Lee, S. S. [1 ]
Cho, S. H. [1 ]
Kim, J. H. [1 ]
Hong, Y. J. [1 ]
Han, Y. G. [1 ]
Song, K. B. [1 ]
Moon, M. W. [1 ]
Cho, G. S. [1 ]
Choi, E. H. [1 ]
机构：
[1] Kwangwoon Univ, Dept Electrophys, PDP Res Ctr, Charged Particle Beam & Plasma Lab, Seoul 139701, South Korea
来源：
IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In alternating current plasma display panels (AC-PDPs), the ion-induced secondary electron emission coefficient (gamma) has effect on breakdown voltage. In order to find out optimized deposition condition of MgO, we have measured the ion-induced secondary electron emission coefficient with deposition rate of MgO by using Gamma Focused Ion beam (gamma-FIB) system. In this experiment, deposition method of MgO protective layer has used Electron beam (E-beam) evaporation system and deposition rate of MgO was progressed four steps from 5 angstrom/sec up to 20 angstrom/sec. As a result, we obtained the highest ion-induced secondary electron emission coefficient at 20 angstrom/sec.
引用
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页码：195 / 198
页数：4
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