Modeling selective-area growth of InAsSb nanowires

被引：7
|
作者：
Sokolovskii, A. S. [1 ,2 ]
Robson, M. T. [2 ]
LaPierre, R. R. [1 ,2 ]
Dubrovskii, V. G. [1 ]
机构：
[1] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia
[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
来源：
NANOTECHNOLOGY | 2019年 / 30卷 / 28期
基金：
俄罗斯基础研究基金会; 加拿大自然科学与工程研究理事会;
关键词：
nanowire; molecular beam epitaxy; indium arsenide antimonide; InAsSb; antimonide;
D O I：
10.1088/1361-6528/ab1375
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An analytical growth model is presented to explain the influence of antimony fractional flux on the morphology evolution of catalyst-free InAs1-xSbx semiconductor nanowires grown by the selective-area vapor-solid mechanism on a Si (111) substrate by molecular beam epitaxy. Increasing Sb fractional flux promoted radial growth and suppressed axial growth, resulting in 'nano-disks'. This behavior is explained by a model of indium adatom diffusion along nanowire facets.
引用
收藏
页数：7
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