Optimization of Silicon-Silicon Adhesive Wafer Bonding

被引：0

作者：

Holl, Susan L. ^{[1
]}

Korrapati, Srinivasulu ^{[2
]}

Colinge, Cynthia ^{[3
]}

机构：

[1] Calif State Univ Sacramento, Dept Mech Engn, Sacramento, CA 95819 USA

[2] Calif State Univ, Dept Elect & Elect Engn, Sacramento, CA 95819 USA

[3] Tyndall Natl Inst, Cork, Ireland

来源：

SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE | 2010年 / 33卷 / 04期

关键词：

D O I：

10.1149/1.3483519

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Optimization of bonding parameters to develop a low temperature adhesive wafer bonding process for silicon was studied. SU-8 was used as the adhesive. The Key Process Input Variables were soft bake temperature, UV exposure and bonding temperature. The soft bake temperatures were 70 degrees C, 90 degrees C and 95 degrees C. UV exposure energies were 50 mJ/cm(2), 100 mJ/cm(2) and 150 mJ/cm(2) and bonding temperatures of 90 degrees C, 115 degrees C and 140 degrees C were studied to optimize the curing process. The quality of the bonds was determined by two Key Process Output Variables: the fraction of interfacial area in intimate contact, measured by void area, and the strength of the bond interaction, measured by tensile strength. A general linear statistical model was used to determine the impact of the KPIVs on the KPOVs. The optimum conditions are soft bake temperature: 90 degrees C, UV exposure: 100 mJ/cm(2) and bonding temperature: 115 degrees C.

引用

页码：297 / 306

页数：10

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