Propagation loss in single-mode ultrasmall square silicon-on-insulator optical waveguides

被引:77
|
作者
Grillot, F [1 ]
Vivien, L
Laval, S
Cassan, E
机构
[1] Inst Natl Sci Appl, FOTON, CNRS, UMR,Lab Etud Nanostruct Semicond, F-35043 Rennes, France
[2] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
关键词
leakage; optical interconnects; optical telecommunications; optical waveguide; propagation loss; roughness; SOI;
D O I
10.1109/JLT.2005.861939
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon-on-insulator (SOI) optical waveguides insure high electromagnetic field confinement but suffer both from side-all roughness responsible of scattering effects and from leakage toward the silicon substrate. These two mechanisms are the main sources of loss in such optical waveguides. Considering the case of single-mode ultrasmall square SOI waveguides, propagation loss is calculated at telecommunication wavelengths taking into account these two loss contributions. Leakage toward the substrate and scattering effects strongly depend on the waveguide size as well as on the operating wavelength.
引用
收藏
页码:891 / 896
页数:6
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