Photoluminescence and low-threshold lasing of ZnO nanorod arrays

被引:39
|
作者
Xu, Ni [1 ]
Cui, Yong [1 ]
Hu, Zhigao [2 ]
Yu, Wenlei [2 ]
Sun, Jian [1 ]
Xu, Ning [1 ]
Wu, Jiada [1 ]
机构
[1] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[2] E China Normal Univ, Sch Informat Sci & Technol, Shanghai 200241, Peoples R China
来源
OPTICS EXPRESS | 2012年 / 20卷 / 14期
基金
国家教育部博士点专项基金资助;
关键词
RANDOM LASER ACTION; ROOM-TEMPERATURE; ZINC-OXIDE; DEPOSITION; FILMS; MORPHOLOGY;
D O I
10.1364/OE.20.014857
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on the photoluminescence (PL) and lasing characteristics of ZnO nanorod arrays (NRAs) fabricated by hydrothermal process on nanocrystalline ZnO seeded Si and post-growth annealing. The morphology of the ZnO NRAs was examined by field emission scanning electron microscopy and the structure was characterized by x-ray diffraction, Fourier-transform infrared and Raman scattering spectroscopy. The properties of light emission were studied by continuous wave (CW) and 30 ps pulsed ultraviolet excitation. The ZnO NRAs consist of aligned nanorods and are nanocrystalline with wurtzite structure and c-axis orientation. At room temperature, the ZnO NRAs are capable of emitting strong CW PL and pulsed stimulated emission, with the latter showing obvious lasing characteristics. The threshold for lasing was observed to be similar to 16 kW/cm(2). (c) 2012 Optical Society of America
引用
收藏
页码:14857 / 14863
页数:7
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