Radiation induced recombination processes in AIN ceramics

被引:16
|
作者
Trinkler, L [1 ]
Berzina, B [1 ]
机构
[1] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia
关键词
D O I
10.1088/0953-8984/13/40/307
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Luminescence processes are studied for aluminum nitride, AIN, ceramics after exposure to ionizing radiation and ultraviolet radiation (UVR) using the methods of photoluminescence (PL), optically stimulated luminescence (OSL) and thermoluminescence (TL). The luminescence processes are explained in terms of radiation-induced charge transfer and radiative recombination of the donor-acceptor pairs, based on oxygen-related defects of the AIN crystalline lattice. The comparative effects of the two types of radiation, the efficiency of TL and OSL and the optimal sintering procedure of the ceramics are discussed for an AIN ceramic proposed for potential application in dosimetry.
引用
收藏
页码:8931 / 8938
页数:8
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