Optical-pump/intense-THz-probe Spectroscopy of Gated Graphene

被引:0
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作者
Hafez, H. A. [1 ,2 ]
Levesque, P. L. [3 ]
Al-Naib, I. [4 ]
Dignam, M. M. [5 ]
Chai, X. [1 ]
Choubak, S. [6 ]
Desjardins, P. [6 ]
Martel, R. [3 ]
Ozaki, T. [1 ]
机构
[1] INRS, INRS EMT, Adv Laser Light Source, Varennes, PQ J3X 1S2, Canada
[2] Helwan Univ, Dept Phys, Fac Sci, Cairo 11792, Egypt
[3] Univ Montreal, Dept Chim, Montreal, PQ H3C 3J7, Canada
[4] Univ Dammam, Dept Biomed Engn, Coll Engn, Dammam 31441, Saudi Arabia
[5] Queens Univ, Dept Phys Engn Phys & Astron, Kingston, ON K7L 3N6, Canada
[6] Polytech Montreal, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We study nonlinear THz effects in photoexcited gated graphene, using optical-pump/intense-THz-probe spectroscopy. A crossover from negative to positive differential THz transmission has been observed at the lowest doping concentration when the THz field is increased. Using a simple Drude model of the graphene photoconductivity, we attributed the observed behavior to a transition from a domain in which the increase in the Drude weight dominates over the increase in the scattering rate after photoexcitation, to a domain with the opposite properties when the THz probe field is increased.
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页数:2
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