Evidence on simultaneous improvement of motional impedance and Q-factor of silicon phononic crystal micromechanical resonators by variously engineering the cavity defects

被引:9
|
作者
Wang, Nan [1 ,2 ]
Hsiao, Fu-Li [3 ]
Palaniapan, Moorthi [1 ]
Lee, Chengkuo [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] ASTAR, Inst Microelect, Singapore 117685, Singapore
[3] Natl Changhua Univ Educ, Grad Inst Photon, Changhua 500, Taiwan
关键词
SQUARE LATTICE; BAND-STRUCTURE; VHF;
D O I
10.1063/1.4867044
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, we report the experimental evidence on the capability to simultaneously improve the Q-factor (Q) and motional impedance (Z) of silicon phononic crystal (PnC) micromechanical (MM) resonators by properly engineering the cavity defects on an otherwise perfect two-dimensional (2D) silicon PnC slab. The cavity defects of the resonators in the current study are engineered by patterning additional scattering holes to the pure Fabry-Perot resonant cavity, which is created by deleting two rows of scattering air holes from the centre of the 2D square air-hole array. Experimental results show that by varying the radii of the additional scattering holes patterned in the cavity, the fabricated silicon PnC MM resonators can have their Q and Z improved simultaneously, showing great potential in overcoming the trade-off between Z and Q in conventional resonators of piezoelectric type and capacitive type. (C) 2014 AIP Publishing LLC.
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页数:7
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