Highly linear CMOS triode transconductor for VHF applications

被引:9
|
作者
Jendernalik, W. [1 ]
Szczepanski, S. [1 ]
Koziel, S. [2 ]
机构
[1] Gdansk Univ Technol, Fac Elect Telecommun & Informat, PL-80952 Gdansk, Poland
[2] Reykjavik Univ, Sch Sci & Engn, Engn Optimizat & Modeling Ctr, IS-101 Reykjavik, Iceland
关键词
LOW-VOLTAGE CMOS; FLOATING-GATE TRANSISTORS; DYNAMIC-RANGE; OTA; COMPENSATION; FILTERS;
D O I
10.1049/iet-cds.2011.0138
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback loop are used, linearisation improvement is obtained without compromising bandwidth and power consumption. The non-linearity because of the mobility degradation is also compensated. The transconductance of the proposed transconductor can be up to several times higher than for the classical topologies with no extra power consumption. As an example, the transconductor is used to design sixth-order elliptic band-pass filter in the very-high-frequency (VHF) range, simulated in a 0.35 mu m CMOS process (AMS).
引用
收藏
页码:9 / 18
页数:10
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