Microstructure evolution and enhanced green luminescence in P-doped ZnO nanowires

被引:8
|
作者
Liu, J. [1 ]
Xie, S. F. [1 ]
Cao, Y. [2 ]
Chen, Y. L. [1 ]
Zeng, H. D. [2 ]
Yang, J. H. [1 ]
Liu, F. [1 ]
Wang, X. Y. [1 ]
机构
[1] Shanghai Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200093, Peoples R China
[2] E China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China
关键词
Semiconductors; Microstructure; Optical materials and properties;
D O I
10.1016/j.matlet.2011.11.100
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phosphor (P) doping cannot only modify the electrical properties of ZnO nanowires (NWs), but also lead to changes of microstructures and optical properties. In this work. P-doped ZnO NW arrays were synthesized by traditional chemical vapor transport and condensation (CVTC) method using P2O5 powder as p-type dopant source. Morphology characterization demonstrated that P doping suppressed the axial growth and enhanced the lateral growth of ZnO NWs. The NWs grow thicker and shorter with increasing P2O5 concentrations and form flake-like nanostructures when the weight percent of P2O5 was over 5%. Intense green light emission from P doped ZnO NWs was observed when excited by 325 nm He-Cd laser, which means that these NWs are good candidate for green light emission devices. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:80 / 82
页数:3
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