Quantum dot photonic crystal detectors

被引：0

作者：

Posani, Kalyan Teja ^{[1
]}

Tripathi, Vaibhav ^{[1
]}

Annamalai, Senthil ^{[1
]}

Krishna, Sanjay ^{[1
]}

Perahia, Raviv ^{[2
]}

Crisafulli, Orion ^{[2
]}

Painter, Oskar ^{[2
]}

机构：

[1] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] CALTECH, Caltech Appl Phys, Pasadena, CA 91125 USA

来源：

QUANTUM DOTS, PARTICLES, AND NANOCLUSTERS III | 2006年 / 6129卷

关键词：

photonic crystal; resonant cavity; quantum dots; infrared sensors; detectors; focal plane arrays; conversion efficiency; detectivity; dark current;

D O I：

10.1117/12.641750

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper we report the use of a photonic crystal resonant cavity to increase the quantum efficiency, detectivity (D*) and the background limited infrared photodetector (BLIP) temperature of a quantum dot detector. The photonic crystal is incorporated in InAs/InGaAs/GaAs dots-in-well (DWELL) detector using Electron beam lithography. From calibrated blackbody measurements, the conversion efficiency of the detector with the photonic crystal (DWELL-PC) is found to be 58.5% at -2.5 V while the control DWELL detectors have quantum efficiency of 7.6% at the same bias. We observed no significant reduction in the dark current of the photonic crystal devices compared to the normal structure. The generation-recombination limited D* at 77K with a 300K F1.7 background, is estimated to be 6 x 10(10) cmHz(1/2) /W at -3V bias for the DWELL-PC which is a factor of 20 hi her than that of the 9 control sample. We also observed a 20% increase in the BLIP temperature for the DWELL-PCs.

引用

页数：8

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