Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

被引：20
|
作者：
Kaun, Stephen W. [1 ]
Wong, Man Hoi [2 ]
Mishra, Umesh K. [2 ]
Speck, James S. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 26期
关键词：
ELECTRON-MOBILITY; GAN; SCATTERING; TRANSPORT; CARBON; STATES;
D O I：
10.1063/1.4730951
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlGaN/AlN/GaN heterostructures were grown on 6H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of similar to 2 x 10(10), similar to 5 x 10(8), and similar to 5 x 10(7) cm(-2), respectively. Growths were carried out under Ga-rich conditions by plasma-assisted molecular beam epitaxy to determine the influence of threading dislocation density on the sheet resistance of AlGaN/AlN/GaN heterostructures. High threading dislocation density was observed to significantly degrade Hall mobility. An AlGaN/AlN/GaN heterostructure with a similar to 2 nm AlN interlayer and a threading dislocation density of similar to 5 x 10(7) cm(-2) achieved the very low room temperature sheet resistance of 175 Omega/square. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730951]
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页数：4
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