Electron transport in InAs-InAlAs core-shell nanowires

被引：17
|
作者：
Holloway, Gregory W. [1 ,2 ,3 ]
Song, Yipu [1 ,4 ]
Haapamaki, Chris M. [5 ]
LaPierre, Ray R. [5 ]
Baugh, Jonathan [1 ,3 ,4 ]
机构：
[1] Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada
[2] Univ Waterloo, Dept Phys & Astron, Waterloo, ON N2L 3G1, Canada
[3] Univ Waterloo, Waterloo Inst Nanotechnol, Waterloo, ON N2L 3G1, Canada
[4] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada
[5] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 04期
基金：
加拿大自然科学与工程研究理事会; 加拿大创新基金会;
关键词：
FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR NANOWIRE; SURFACE PASSIVATION; MOBILITY; STATES;
D O I：
10.1063/1.4788742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial In0.8Al0.2As shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We argue that this signifies a reduction in low temperature ionized impurity scattering for the passivated nanowires, implying a reduction in surface states. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788742]
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页数：5
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