A Study on the Computer Simulation for the Fractal Growth of Semiconductor Thin Films

被引：0
|
作者：
Ji, Liang-Wen [1 ]
Tsai, Mei-Li [2 ]
机构：
[1] Natl Formosa Univ, Inst Electroopt & Mat Sci, Yunlin 632, Taiwan
[2] Chiayi Jhonghe Jr High Sch, Chiayi 608, Taiwan
来源：
INFORMATION, COMMUNICATION AND ENGINEERING | 2013年 / 311卷
关键词：
Semiconductor Thin Film; Fractal Theory; Fractal dimension; Multifractal Spectra; Diffusion-Limited Aggregation; Computer Simulation;
D O I：
10.4028/www.scientific.net/AMM.311.451
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper is based on theoretical methods to study the computer simulation and analysis of the growth of semiconductor thin films. First, according to the traditional theory of thin-film growth, the relationship between the growth morphology and the physical parameters are discussed. Then, fractal theory has been applied to improve the diffusion-limited aggregation (DLA) model. And the simulations of the two-dimensional and three-dimensional thin-film growth are proposed. A computer program of the simulation of the thin-film growth is developed with help of MATLAB. Finally, the results of the simulation of the thin-film growth have been analyzed by the fractal dimension and multifractal spectra. The results of this paper can be applied to the dynamic simulation of nanometer thin-film growth, and an effective simulation tool is to provide the semiconductor process.
引用
收藏
页码：451 / +
页数：2
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