Current-voltage characteristic of n-p-p(+) structures based on a chromium-compensated silicon-germanium solid solution

Statistical currents in the n-p-p(+) structures, synthesized on the basis of a chromium-compensated silicon-germanium solid solution, have been studied experimentally. The I-V characteristic of such structures was observed to have a section in which the current increases sublinearly with voltage V approximate to V(0)exp(J(a)W). The experimental results are explained on the basis of the theory of injection de;etion. (C) 1996 American Institute of Physics.