Binding of a 3He Impurity to a Screw Dislocation in Solid 4He

被引：26

作者：

Corboz, P. ^{[1
]}

Pollet, L. ^{[1
]}

Prokof'ev, N. V. ^{[1
,2
,3
]}

Troyer, M. ^{[1
]}

机构：

[1] ETH, CH-8093 Zurich, Switzerland

[2] Univ Massachusetts, Dept Phys, Amherst, MA 01003 USA

[3] Russian Res Ctr, Kurchatov Inst, Moscow 123182, Russia

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 15期

基金：

瑞士国家科学基金会; 美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.101.155302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using first-principles simulations for the probability density of finding a (3)He atom in the vicinity of the screw dislocation in solid (4)He, we determine the binding energy to the dislocation nucleus E(B)=0.8 +/- 0.1 K and the density of localized states at larger distances. The specific heat due to (3)He features a peak similar to the one observed in recent experiments, and our model can also account for the observed increase in shear modulus at low temperature. We further discuss the role of (3)He in the picture of superfluid defects.

引用

页数：4

共 50 条

[1] Binding energy of one 4He impurity in liquid 3He
Boronat, J.
Arias de Saavedra, F.
Buendia, E.
Polls, A.
[J]. Journal of Low Temperature Physics, 1994, 94 (3-4)
[2] Diffusion of Impurity Excitations in Superfluid and Solid 3He–4He Mixtures
Igor N. Adamenko
Konstantin E. Nemchenko
Alexander V. Zhukov
Chung-In Um
Thomas F. George
Lakshmi N. Pandey
[J]. Journal of Low Temperature Physics, 1998, 111 : 145 - 179
[3] Vacancy-impurity nanoclusters in solid solutions 3He - 4He
Pushkarov, Dimitar I.
[J]. 16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS, 2010, 253
[4] SOLID 3HE - 4HE MIXTURES
GUYER, RA
[J]. PHYSICS LETTERS A, 1968, A 27 (07) : 452 - &
[5] 3He impurity excitation spectrum in liquid 4He
Fabrocini, A
Polls, A
[J]. PHYSICAL REVIEW B, 1998, 58 (09): : 5209 - 5212
[6] Effects of 3He impurity on solid 4He studied by compound torsional oscillator
Gumann, P.
Keiderling, M. C.
Ruffner, D.
Kojima, H.
[J]. PHYSICAL REVIEW B, 2011, 83 (22)
[7] Quantum simulation of 3He impurities and of 4He interstitials in solid 4He
Wierschem, Keola
Manousakis, Efstratios
[J]. PHYSICAL REVIEW B, 2010, 82 (18):
[8] 4He nanoclusters around vacancies in solid solutions of 4He in 3He
Gan'shin, AN
Grigor'ev, VN
Maidanov, VA
Penzev, AA
Rudavskii, ÉY
Rybalko, AS
Syrnikov, EV
[J]. LOW TEMPERATURE PHYSICS, 2003, 29 (05) : 362 - 368
[9] 3He Impurity Effects on the Growth Kinetics of 4He Crystals
M. Suzuki
M. Thiel
P. Leiderer
[J]. Journal of Low Temperature Physics, 1997, 109 : 357 - 367
[10] Purification of 3He from a 4He impurity using adsorption
Dmitriev, VV
Zavjalov, VV
Zmeev, DY
Levitin, LV
[J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2004, 47 (04) : 567 - 569

← 1 2 3 4 5 →