Electrochemical characterization of mechanically implanted boron-doped diamond electrodes

被引:14
|
作者
Cieciwa, A
Wüthrich, R
Comninellis, C [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Grp Genie Electrochim, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech Fed Lausanne, Lab Syst Robot, CH-1015 Lausanne, Switzerland
关键词
boron-doped diamond electrodes; random microelectrodes-array; mechanical implantation; spherical diffusion;
D O I
10.1016/j.elecom.2005.12.013
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A new, low production cost, technique for the preparation of boron-doped diamond electrodes (BDD) is presented. The technique is based on mechanical implantation of BDD particles into a titanium substrate. The electrochemical characterization of low coverage mechanically implanted boron-doped diamond electrodes was performed using the Fe(CN)(6)(4-/3-) redox couple and compared with the BDD thin-films electrodes. The interpretation of the recorded voltammetric responses Was based on microelectrodes-array theory. The thickness of the diffusion layer, the spacing of particles and equivalent particle dimension was considered. Depending on the potential scan rate the linear or spherical diffusion with partial overlap was observed. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:375 / 382
页数:8
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