Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers

被引：2

作者：

Yuan Ye ^{[1
,2
]}

Su Xiang-Bin ^{[1
,2
]}

Yang Cheng-ao ^{[1
,2
]}

Zhang Yi ^{[1
,2
]}

Shang Jin-Ming ^{[1
,2
]}

Xie Sheng-Wen ^{[1
,2
]}

Zhang Yu ^{[1
,2
]}

Ni Hai-Qiao ^{[1
,2
]}

Xu Ying-Qiang ^{[1
,2
]}

Nil Zhi-Chuan ^{[1
,2
,3
,4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optmlectron Engn, Beijing 100049, Peoples R China

[3] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China

[4] Shanxi Univ, Coll Phys & Elect Engn, Lab Solid Quantum Mat Ctr, Taiyuan 030006, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2020年 / 39卷 / 06期

基金：

中国国家自然科学基金;

关键词：

quantum dot laser; molecular beam epitaxy; characteristics temperature; mid-infrared; MODULATION CHARACTERISTICS; PERFORMANCE; DEPENDENCE;

D O I：

10.11972/j.issn.1001-9014.2020.06.001

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

GaAs-based 1. 3 mu m InAs quantum dot laser have been grown by MBE system. Under the optimized InAs quantum dots growth temperature of 520.,and the methods of Be-doping in the active region are adopted for better device performance. With a ridge width of 100 mu m and cavity length of 2 mm,the maximum output power of single facet without coating has reached up to 1008 mW under continuous wave(CW)operation at room temperature,and the threshold current density is 110 A/cm(2). The QD lasers can still operate at continuous waves (CW)up to 80 degrees C,and the characteristic temperature below 50 degrees C is as high as 405 K.

引用

页码：667 / 670

页数：4

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