Microfluidic hydrothermal growth of ZnO nanowires over high aspect ratio microstructures

被引:30
|
作者
Ladanov, M. [1 ,2 ,5 ]
Algarin-Amaris, P. [2 ]
Matthews, G. [3 ]
Ram, M. [4 ,5 ]
Thomas, S. [2 ]
Kumar, A. [5 ]
Wang, J. [2 ]
机构
[1] Univ S Florida, Dept Chem & Biomed Engn, Tampa, FL 33620 USA
[2] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA
[3] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
[4] Univ S Florida, Nanotechnol Res & Educ Ctr, Tampa, FL 33620 USA
[5] Univ S Florida, Dept Mech Engn, Tampa, FL 33620 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTOR;
D O I
10.1088/0957-4484/24/37/375301
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A hydrothermal synthesis of densely packed ZnO nanowires was realized in a confined space via forced circulation of the heated growth solution through microfluidic channels formed primarily by a set of high aspect ratio trenches in a Si substrate. A uniform and conformal seeding layer of ZnO was deposited to cover the entire surface of the trenches by means of atomic layer deposition (ALD). Densely packed ZnO nanowires were formed inside the trenches with particularly good coverage over the sidewalls, where they would not grow effectively through a conventional hydrothermal method. The strategy for controlled growth of densely packed ZnO nanowires over such high aspect ratio microstructures is deemed beneficial when these microstructures are employed as electrodes with high specific surface areas for devices such as supercapacitors or any other electrochemical devices.
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页数:9
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