Synthesis of Type I PbSe/CdSe Dot-on-Plate Heterostructures with Near-Infrared Emission

被引:27
|
作者
Williams, Kali R. [1 ]
Diroll, Benjamin T. [2 ]
Watkins, Nicolas E. [1 ]
Ru, Xue [3 ]
Brumberg, Alexandra [1 ]
Klie, Robert F. [3 ]
Schaller, Richard D. [1 ,2 ]
机构
[1] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
[2] Argonne Natl Lab, Ctr Nanoscale Mat, Lemont, IL 60439 USA
[3] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
基金
美国国家科学基金会;
关键词
AMPLIFIED SPONTANEOUS EMISSION; THRESHOLD STIMULATED-EMISSION; NANOPLATELET HETEROSTRUCTURES; SEMICONDUCTOR NANOCRYSTALS; 2D NANOPLATELETS; SEEDED GROWTH; PHOTOLUMINESCENCE; NANORODS; SELENIDE; ROD;
D O I
10.1021/jacs.8b13794
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Zero-dimensional PbSe quantum dots are heterogeneously nucleated and grown onto two-dimensional zincblende CdSe nanoplatelets. Electron microscopy shows ad-grown dots predominantly decorate edges and corners of the nanoplatelets. Spectroscopic characterizations relate type I electronic alignment as demonstrated via photoluminescence excitation spectroscopy enhancement of near-infrared emission. Transient photoluminescence and absorption convey ultrafast transfer of excitons to the lower energy semiconductor dots. These structures combine benefits of large absorption cross sections of nanoplatelets and efficient near-infrared emission of PbSe with quantum confinement tuning of energy gap.
引用
收藏
页码:5092 / 5096
页数:5
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